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Thermomechanical Properties of Hydrogen Silsesquioxanes
Published online by Cambridge University Press: 15 February 2011
Abstract
Using Si and GaAs substrates, the coefficient of thermal expansion (CTE) and the bi-axial modulus of thin hydrogen silsesquioxanes (HSQ) films are deduced by means of wafer curvature measurement. The same properties of plasma-enhanced CVD oxide are also reported.
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- Copyright © Materials Research Society 1997
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