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Time Resolved Photoconduction Studies of Uniformly Doped and p-n Junction Si Nanowires

Published online by Cambridge University Press:  01 February 2011

Loucas Tsakalakos ,
Darryl Michael ,
Jody Fronheiser ,
Joleyn Balch ,
Robert Wortman ,
Paul Wilson ,
David White ,
Rolf Boone  and
Stephen LeBoeuf
Loucas Tsakalakos
Affiliation:
tsakalakos@research.ge.com, General Electric Global Research Center, Micro & Nano Structures Technologies, One Research Circle, KW-C1811, Niskayuna, NY, 12309, United States, 518-387-5715
Darryl Michael
Affiliation:
michael@research.ge.com, General Electric Global Research Center, Niskayuna, NY, 12309, United States
Jody Fronheiser
Affiliation:
fronheis@research.ge.com, General Electric Global Research Center, Niskayuna, NY, 12309, United States
Joleyn Balch
Affiliation:
balch@research.ge.com, General Electric Global Research Center, Niskayuna, NY, 12309, United States
Robert Wortman
Affiliation:
wortman@purdue.edu, General Electric Global Research Center, Niskayuna, NY, 12309, United States
Paul Wilson
Affiliation:
wilson@crd.ge.com, General Electric Global Research Center, Niskayuna, NY, 12309, United States
David White
Affiliation:
dwhite@crd.ge.com, General Electric Global Research Center, Niskayuna, NY, 12309, United States
Rolf Boone
Affiliation:
boone@research.ge.com, General Electric Global Research Center, Niskayuna, NY, 12309, United States
Stephen LeBoeuf
Affiliation:
leboeuf@crd.ge.com, General Electric Global Research Center, Niskayuna, NY, 12309, United States
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Abstract

The time resolved and DC photoconduction characteristics of Si nanowire devices are described. Si nanowires with diameters ranging from 20-100 nm were grown using the vapor-liquid-solid (VLS) growth mechanism under standard conditions and devices were fabricated in a back-gate field effect transistor (FET) configuration using simple photolithography. It is shown that under certain biasing conditions, illumination with light from light emitting diodes with wavelengths ranging from 480 nm to 625 nm causes changes in current as high as 4%. On the other hand, illumination by a broadband incandescent source causes a ∼4.1% percent change in current. Photoconductive decay curves show bi- and tri-exponential behavior, indicative of multiple potential recombination mechanisms occurring within the Si nanowire devices. p-n doped Si nanowires show similar behavior. Studies under various drain and gate voltages provides insight into the proposed mechanism. It is argued that the Shottky barrier plays a strong role in the observed photoconduction process in these wires, as do transitions involving surface and deep level trap states.

Keywords

Sinanostructureoptoelectronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 958: Symposium L – Group IV Semiconductor Nanostructures—2006 , 2006 , 0958-L10-36
Copyright
Copyright © Materials Research Society 2007

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References

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