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Titanium Nitride Formation by Low Energy Ar Ion Bombardment and UV-Light Irradiation During Deposition
Published online by Cambridge University Press: 21 February 2011
Abstract
Titanium nitride films were produced by a newly developed photon and ion beam assisted deposition system (PHIBAD system). With an electron beam evaporator titanium was deposited on silicon substrates in a controlled nitrogen environment. The growing δ-TiN films were bombarded with argon ions and illuminated with UV-light. The results demonstrate that the impurity content, the nitrogen to titanium ratio of the films, the microstructure and the crystal alignment are changed using UV-light irradiation during ion assisted deposition.
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