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Transient Conductivity Measurements in Pulsed Ion Beam Melted Silicon

Published online by Cambridge University Press:  15 February 2011

R.M. Fastow ,
J. Gyulai  and
J.W. Mayer
R.M. Fastow
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, N.Y. 14853
J. Gyulai
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, N.Y. 14853
J.W. Mayer
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, N.Y. 14853
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Abstract

A pulsed proton beam, ˜200 ns in duration, has been used to melt and regrow single crystal silicon. The protons had an energy of 300 kev, yielding a measured energy density of 0.8–2.0 J/cm2. The method of transient conductivity has been used to determine the melt depths, melt durations, and regrowth velocities. The measured values for 2.0 J/cm2 were, respectively, 1.7 μm, 2 μsec, and 1.4 m/sec.

Computer generated melt curves were compared to experiment with good agreement. The energy required to initiate melt was determined, and a linear dependence of melt depth with energy has been observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 69
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

permanent address: Central Res. Inst. of Physics H-1525 Budapest

References

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