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Transient Infrared Reflection and Transmission of Silicon During Pulsed Laser Annealing
Published online by Cambridge University Press: 15 February 2011
Abstract
We report measurements of reflectivity and transmission of probe beams at 0.633, 1.06, 1.34, and 3.39 μm during pulsed laser annealing of silicon. The transient infrared optical response of the silicon was monitored with several fast photodetectors. The diversity of detector response to transmitted light indicates that contradictory results obtained previously may be artifacts of photodetector response.
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- Copyright © Materials Research Society 1982
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