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Transition Metals in Electrically active Sites after Incoherent Light Annealing of Boron-Doped Czochralski-Grown Silicon
Published online by Cambridge University Press: 26 February 2011
Abstract
Two hole trap levels H(0.45) and H(0.29) with properties close to those of metal-related defect states were found in virgin or implanted CZ silicon substrates submitted to a short duration Rapid Thermal Annealing (RTA) around 1000 °C. These hole trap levels were assigned to the presence of Fe or Cr in interstitial solution after RTA. Control experiments using chromium-diffused samples allowed to verify the quenching mechanism of chromium atoms in electrically active site during the annealing treatment, with a cooling rate-dependent concentration. After a subsequent low temperature annealing, the supersaturated interstitial solution of chromium evolves toward more stable defect configurations.
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- Copyright © Materials Research Society 1988