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Transport Path in Hydrogenated Microcrystalline Silicon

Published online by Cambridge University Press:  01 February 2011

N. Wyrsch ,
C. Droz ,
L. Feitknecht ,
J. Spitznagel  and
A. Shah
N. Wyrsch
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, CH-2000 Neuchâtel, Switzerland.
C. Droz
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, CH-2000 Neuchâtel, Switzerland.
L. Feitknecht
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, CH-2000 Neuchâtel, Switzerland.
J. Spitznagel
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, CH-2000 Neuchâtel, Switzerland.
A. Shah
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, CH-2000 Neuchâtel, Switzerland.
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Abstract

Undoped microcrystalline silicon samples deposited in the transition regime between amorphous and microcrystalline growth have been investigated by dark conductivity measurement and Raman spectroscopy. From the latter, a semi-quantitative crystalline volume fraction Xc of the sample was deduced and correlated with dark conductivity data in order to reveal possible percolation controlled transport. No threshold was observed around the critical crystalline fraction value Xc of 33%, as reported previously, but a threshold in conductivity data was found at Xc≈50%. This threshold is interpreted here speculatively as being the result of postoxidation, and not constituting an actual percolation threshold.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A25.3
Copyright
Copyright © Materials Research Society 2002

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