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Transport Properties Of Doped CsBi4Te6 Thermoelectric Materials

Published online by Cambridge University Press:  10 February 2011

Paul W. Brazis ,
Melissa Rocci ,
Duck-Young Chung ,
Mercouri G. Kanatzidis  and
Carl R. Kannewurf
Paul W. Brazis
Affiliation:
Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208–3118
Melissa Rocci
Affiliation:
Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208–3118
Duck-Young Chung
Affiliation:
Department of Chemistry and Center for Fundamental Materials Research, Michigan State University, East Lansing, MI 48824–1322
Mercouri G. Kanatzidis
Affiliation:
Department of Chemistry and Center for Fundamental Materials Research, Michigan State University, East Lansing, MI 48824–1322
Carl R. Kannewurf
Affiliation:
Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208–3118
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Abstract

In previous investigations we have introduced a variety of new chalcogenide-based materials with promising properties for thermoelectric applications. The chalcogenide CsBi4Te6 was previously reported to have a high ZT product with a maximum value at 260K. In order to improve this value, a series of doped CsBi4Te6 samples has been synthesized. Current doping studies have been very encouraging, with one sample found to have a maximum power factor of 51.5 μW/cm·K2 at 184 K. This paper reports on material characterization studies through the usual transport measurements to determine optimum doping concentration for various dopants.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 545: Symposium Z – Thermoelectric Materials 1998 - The Next Generation… , 1998 , 75
Copyright
Copyright © Materials Research Society 1999

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