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Triple and Quadruple Junctions Thermophotovoltaic Devices Lattice Matched to InP

Published online by Cambridge University Press:  01 February 2011

Lekhnath Bhusal  and
A Freundlich
Lekhnath Bhusal
Affiliation:
lbhusal@uh.edu, University of Houston, Physics and Center for Advanced Materials, 724 SR-1, 4800 Calhoun, Houston, TX, 77204, United States, 7137477724
A Freundlich
Affiliation:
afreundlich@uh.edu, University of Houston, Center for Advanced Materials and Physics Department, 724 SR1, 4800 Calhoun, Houston, TX, 77204, United States
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Abstract

Power conversion in thermophotovoltaic (TPV) or any other photovoltaic device can be increased by implementing monolithically series connected multi-bandgap structure in the device. The main concern for multi-bandgap material is the availability of different band gaps for the optimal operation of the device. Based on the recent work, GaAsN/InAsN superlattice lattice matched to InP has shown the potential of achieving band gaps in the range of 0.65-0.35eV at 300K, which is technologically important range for the TPV structure due to the availability of the photon energies in this range from the heat source. In this work, we will present the calculation details and results to find the maximum power generated by the multi-bandgap monolithically series connected devices. Optimized band gaps for p-i-n junction subcells were estimated by finding the optimal current to provide the maximum power through the series-connected double, triple and quadruple junction cells for 1350K blackbody radiation as an incident flux.

Keywords

III-Vphotovoltaicsemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 945: Symposium FF – Materials and Basic Research Needs for Solar Energy Conversion , 2006 , 0945-FF07-02
Copyright
Copyright © Materials Research Society 2006

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