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Tunneling Current in Thin Silicon Dioxide Films
Published online by Cambridge University Press: 22 February 2011
Abstract
Tunneling currents through thin silicon dioxide films on p-type silicon are measured at electric fields greater than 5 MV/cm. At the onset of the Fowler-Nordheim tunneling, oscillations in the current are observed. These oscillations are used for characterizing oxide films grown by three different processes: rapid thermal chemical vapor deposition, rapid thermal oxidation and thermal oxidation. We have explored the correlation between the oscillatory tunneling currents and the breakdown fields, and find a low field dc component to correlate with the breakdown fields and obscure the oscillations.
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- Copyright © Materials Research Society 1994