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Ultrathin Gate Oxide Prepared by Oxidation in D2O for Mos Device Applications

Published online by Cambridge University Press:  10 February 2011

Hyojune Kim  and
Hyunsang Hwang
Hyojune Kim
Affiliation:
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, #1, Oryong-dong, Buk-ku, Kwangju, 500-712, KOREA, hwanghs@kjist.ac.kr
Hyunsang Hwang
Affiliation:
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, #1, Oryong-dong, Buk-ku, Kwangju, 500-712, KOREA, hwanghs@kjist.ac.kr
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Abstract

We present a novel gate oxidation process using D2O (deuterium oxide) as an oxidizing gas. The electrical and reliability characteristics of ultrathin gate oxide grown in D2O ambient have been investigated. Compared with a control oxide grown in H2O, a oxide grown in D2O exhibits a significant reduction of charge trapping and interface state generation. Based on a secondary ion mass spectroscopy (SIMS) analysis; we found a deuterium rich-layer at the Si/SiO2 interface. The improvement of electrical and reliability characteristics can be explained by the deuterium incorporation at the Si/SiO2 interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 45
Copyright
Copyright © Materials Research Society 1999

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References

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