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Ultraviolet Laser Ablation of a Silicon Wafer
Published online by Cambridge University Press: 25 February 2011
Abstract
Pulsed laser irradiation at 248 nm can ablate Si atoms from an Si wafer. The mechanism of this photoablation has been examined by laser-induced fluorescence analysis of the Si products. The Si atoms are measured to leave the wafer surface with averaged translational energy of 2.5 kcal/mol. The distribution of translational energy is well described by the theoretical model for non-cascade ablation processes.
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- Copyright © Materials Research Society 1989