Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-19T16:39:14.391Z Has data issue: false hasContentIssue false
  • English
  • Français

Use of the curvature method to determine the misfit stress of epitaxial semiconducting systems: the case of samples thinned for TEM observation.

Published online by Cambridge University Press:  01 February 2011

A. Ponchet ,
M. Cabié ,
L. Durand ,
M. Rivoal  and
A. Rocher
A. Ponchet
Affiliation:
CEMES-CNRS, BP 94347, F-31055 Toulouse, France
M. Cabié
Affiliation:
CEMES-CNRS, BP 94347, F-31055 Toulouse, France
L. Durand
Affiliation:
CEMES-CNRS, BP 94347, F-31055 Toulouse, France
M. Rivoal
Affiliation:
CEMES-CNRS, BP 94347, F-31055 Toulouse, France
A. Rocher
Affiliation:
CEMES-CNRS, BP 94347, F-31055 Toulouse, France
Get access

Abstract

The curvature method which allows to measure the stress in epitaxial layers has been adapted to transmission electron microscopy observations. The samples thinned by the substrate side present some particular mechanical characteristics. The ratio between the substrate thickness and the layer thickness should be taken into account. The experimental conditions allowing a reliable determination of the stress have been established. A finite element calculation has been used to show that the dimensions of the area where the measure is performed can not systematically be neglected. This method has been applied to the semiconducting systems Ga1-xInxAs/GaAs and Ga1-xInxAs/InP.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 795: Symposium U – Thin Films - Stresses and Mechanical Properties X , 2003 , U1.9
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Stoney, G. G., Proc. R. Soc. London Ser. A 82, 172 (1909).Google Scholar
2 Rocher, A., Cabié, M., Ponchet, A., Carrère, H., and Fontaine, C., Proceeding of Microscopy of Semiconducting Materials Conference, Cambridge in press (2003);Google Scholar
Ponchet, A., Cabié, M., and Rocher, A., EPJ-AP in press (2004).Google Scholar
3 Freund, L. B., Floro, J. A., and Chason, E., Appl. Phys. Lett. 74 (14), 1987 (1999).Google Scholar
4 Finot, M., Blach, I. A., Suresh, S., and Fujimoto, H., J. Appl. Phys. 81, 3457 (1997).Google Scholar
5 Rocher, A., Cabié, M., Ponchet, A., and Bertru, N., to be published in the Proceeding of the MRS 2003 Conference (symposium T) (2003).Google Scholar
6 Cabié, M., Ponchet, A., Rocher, A., Paillard, V., and Vincent, L., Appl. Phys. Lett. in press (2004).Google Scholar