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The Use of Tris(Trimethylsilyl)Arsine to Deposit GaAs by OMCVD
Published online by Cambridge University Press: 25 February 2011
Abstract
Chemical vapor deposition experiments using (Me3Si)3As with either GaCl3 or Me3Ga at ambient pressure have produced films of GaAs on Si and semi-conducting GaAs substrates. The films have been characterized by X-ray diffraction and Auger electron spectroscopy, and each have small amounts of C and O impurities. No desired films were deposited from (C6F5)3GaAs(SiMe3)3 at 500°C and low pressures.
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- Copyright © Materials Research Society 1991
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