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Versatile High Rate Plasma Deposition and Processing with very high Frequency Excitation

Published online by Cambridge University Press:  15 February 2011

M. Heintze
M. Heintze*
Affiliation:
Institut für Niedertemperatur-Plasmaphysik, Robert Blum Str. 8–10, 17489 Greifswald, Germany
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Abstract

The interest in plasma deposition using very high frequency (VHF) excitation arose after the preparation of a-Si:H at high growth rates was demonstrated. Subsequently the improved process flexibility and the control of material properties offered by the variation of the plasma excitation frequency was recognized. The preparation of amorphous and microcrystalline thin films in a VHF-plasma is described. The increased growth rates have been attributed to an enhancement of film precursor formation at VHF, to the decreased sheath thickness as well as to an enhancement of the surface reactivity by positive ions. Plasma diagnostic investigations show that the parameters mainly affected by the excitation frequency are the ion flux to the electrodes as well as the sheaths potentials and widths, rather than the plasma density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 471
Copyright
Copyright © Materials Research Society 1997

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References

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