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Very high hole concentrations in C-doped InGaAs using new sources with APOMVPE

Published online by Cambridge University Press:  10 February 2011

A. Tandon  and
R. M. Cohen
A. Tandon
Affiliation:
Materials Science and Eng. Dept., University of Utah, Salt Lake City, UT 84112
R. M. Cohen
Affiliation:
Materials Science and Eng. Dept., University of Utah, Salt Lake City, UT 84112
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Abstract

New sources have been used to grow the first carbon doped, highly p-type InxGa1-xAs (0.2>x>0.7) epilayers on InP substrates by atmospheric pressure organometallic vapor phase epitaxy (APOMVPE). Excellent morphology was obtained simultaneously with high hole concentrations at growth temperatures near 450 °C. High hole concentrations of 1.6×1019 – 8.7×1019 cm−3 (the highest reported to date for APOMVPE), and the corresponding room temperature hole mobilities of 65 – 25 cm2/s, respectively, have been obtained from Hall measurements. X-ray diffraction is consistent with excellent crystal quality. Annealing at temperatures of T=400–500 °C in the presence of either nitrogen or hydrogen was found to change the carrier concentration by only 0–15%. However, after annealing at T=650 °C, irreversible changes occurred in the InGaAs. After a high temperature anneal, reversible order of magnitude changes in the hole concentration was obtained upon further annealing at low temperatures, depending upon the ambient. These results conclusively show that hydrogen does not passivate C acceptor ions in InGaAs. Since changes in the carrier concentration become substantial and reversible only after high temperature annealing, the results strongly suggest that a structural change occurred in the crystal at high temperatures. We consider it likely that this structural change is the precipitation of carbon out of a supersaturated solid solution, and that hydrogen atoms associated with these precipitates act as donors which compensate the hole concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 485: Symposium G – Thin Film Structures for Photovoltaics , 1997 , 241
Copyright
Copyright © Materials Research Society 1998

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