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Void Growth as a Function of Residual Stress Level in Thin, Narrow Aluminum Lines
Published online by Cambridge University Press: 26 February 2011
Abstract
High tensile stresses develop in passivated aluminum line metallizations on silicon substrates after excursion to elevated temperatures. The principal mechanisms to relax these stresses at room temperature are plastic deformation and grain boundary void growth. It is shown that stress relaxation and void growth are intimately connected.
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- Copyright © Materials Research Society 1991
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