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X-RAY Double Crystal Analysis of Structure and Stress Relaxation in Solid Phase Epitaxial CaF2 and Ge/CaF2 Films on (111) Si by in Situ Rapid Isothermal Processing
Published online by Cambridge University Press: 25 February 2011
Abstract
Planar strain in CaF2 and Ge/CaF2 films grown on (111) Si substrate has been measured by an x-ray double crystal diffraction technique using rocking curves. The films grown by a solid phase epitaxial approach using in situ rapid isothermal processing are found to have small tensile planar strain.
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- Copyright © Materials Research Society 1991