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X-ray Photoelectron and UV Photoyield Spectroscopic Studies on Structural and Electronic Properties of SrxBiyTa 2O9 Films

Published online by Cambridge University Press:  11 February 2011

Mitsue Takahashi ,
Minoru Noda  and
Masanori Okuyama
Mitsue Takahashi
Affiliation:
Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1–3 Machikaneyama-cho, Toyonaka, Osaka 560–8531, Japan
Minoru Noda
Affiliation:
Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1–3 Machikaneyama-cho, Toyonaka, Osaka 560–8531, Japan
Masanori Okuyama
Affiliation:
Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1–3 Machikaneyama-cho, Toyonaka, Osaka 560–8531, Japan
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Abstract

Photoelectron spectra by X-ray photoelectron spectroscopy (XPS) and UV-photoyield spectroscopy (UV-PYS) have been analyzed to study O2-annealing effects on band diagrams of ferroelectric SrxBiyTa2O9 (SBT) thin films deposited by pulsed laser deposition (PLD) and metalorganic dcecomposition (MOD) methods. XPS studies on the annealed PLD-SBT film has shown a rapid shift in its Bi 4f core peaks from the oxidized to the metallic ones, as the film suffer Ar+ bombardment. Surface of the annealed film has exhibited lower Fermi level than the as-deposited one in UV-PYS. The result suggests O2-annealing can suppress leakage current through PLD-SBT films. The UV-PYS studies on MOD-SBT have shown almost the intrinsic Fermi levels before and after the additional annealing. The XPS studies have shown that the additional annealing is not effective to improve stabilities of (Bi2O2)2+ layers, once the film is baked and crystallized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 747: Symposia T/V – Crystalline Oxides on Semiconductors – Interfacial Issues for Oxide-Based Electronics , 2002 , T4.8/U9.8
Copyright
Copyright © Materials Research Society 2003

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References

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