Hostname: page-component-5c6d5d7d68-xq9c7 Total loading time: 0 Render date: 2024-08-15T02:43:36.670Z Has data issue: false hasContentIssue false

Yield Stress of Nano- and Micro- Multilayers

Published online by Cambridge University Press:  10 February 2011

P. M. Hazzledine
Affiliation:
UES Inc., 4401 Dayton- Xenia Road, Dayton. OH 45432
S. I. Rao
Affiliation:
UES Inc., 4401 Dayton- Xenia Road, Dayton. OH 45432
Get access

Abstract

An outline theory is given for the strengthening in polycrystalline and ‘single crystal’ multilayers. The model is based on the Hall-Petch theory applied to both the soft mode (in plane) and hard mode (cross plane) of deformation. In this theory the parameters to be evaluated are a Taylor factor M, the shear stress τ0 to move a dislocation within a multilayer and τ*, the shear stress needed to push a dislocation over a grain or interphase boundary. All three parameters are material- specific and attention is focussed on coherent multilayers of γ TiAl with micron thick layers and Cu-Ni with nanometer thick layers. M and some components of τ* are estimated classically. The remaining components of τ* and some components of τ0 are estimated from embedded atom simulations. The model captures the main experimental facts, that γTiAl is plastically very anisotropic with a rising yield stress as the lamellar thickness is refined and that Cu-Ni displays a peak in the yield stress at a layer thickness of approximately 10nm.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Eshelby, J. D., Phys. Stat. Sol. 3, 2057 (1963).Google Scholar
2. Li, J. C. M. and Liu, G. C. T., Phil. Mag. 15, 1059 (1967).Google Scholar
3. Li, J. C. M. and Chou, Y. T., Met. Trans. 1, 1145 (1970).Google Scholar
4. Yamaguchi, M. and Umakoshi, Y., Prog. Mater. Sci. 34, 1 (1990).Google Scholar
5. Yamaguchi, M., Inui, H., Kishida, K., Matsumuro, M. and Shirai, Y., MRS Proc. 364, 3 (1995).Google Scholar
6. Rao, S. I., Woodward, C., Simmons, J. and Dimiduk, D. M., MRS Proc. 364, 129 (1995).Google Scholar
7. Inui, H., Oh, M. H., Nakamura, A. and Yamaguchi, M., Acta Metall. Mater. 40, 3095 (1992).Google Scholar
8. Fu, C. L. and Yoo, M. H., MRS Proc. 186, 265 (1990).Google Scholar
9. Nakano, T., Yokoyama, A. and Umakoshi, Y., Scripta Metall. Mater., 27, 1253 (1992).Google Scholar
10. Hazzledine, P. M., Kad, B. K. and Mendiratta, M. G., MRS Proc. 308, 725 (1993).Google Scholar
11. Rao, S. I., Woodward, C. and Hazzledine, P. M., MRS Proc. 319, 285 (1994).Google Scholar
12. Koehler, J. S., Phys. Rev. B2, 547 (1970).Google Scholar
13. Rao, S. I., Hazzledine, P. M. and Dimiduk, D. M., MRS Proc. 362, 67 (1995).Google Scholar
14. Frank, F. C. and Merwe, J. H. van der, Proc. Roy. Soc. London A198, 216 (1953).Google Scholar