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ZnCdO/ZnMgO and ZnO/AlGaN Heterostructures for UV and Visible Light Emitters

Published online by Cambridge University Press:  01 February 2011

Andrei Osinsky ,
Jianwei Dong ,
J. Q. Xie ,
B. Hertog ,
A. M. Dabiran ,
P. P. Chow ,
S. J. Pearton ,
D. P. Norton ,
D. C. Look  and
W. Schoenfeld
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Andrei Osinsky
Affiliation:
osinsky@svta.com, SVT Associates, 7620 Executive Dr., Eden Prairie, MN, 55347, United States, 952-934-2100 x240, 952-934-2737
Jianwei Dong
Affiliation:
dong@ssvta.com, SVT Associates, Inc., United States
J. Q. Xie
Affiliation:
xie@svta.com, SVT Associates, Inc., United States
B. Hertog
Affiliation:
hertog@svta.com, SVT Associates, Inc., United States
A. M. Dabiran
Affiliation:
dabiran@svta.com, SVT Associates, Inc., United States
P. P. Chow
Affiliation:
chow@svta.com, SVT Associates, Inc., United States
S. J. Pearton
Affiliation:
spear@mse.ufl.edu, University of Florida, United States
D. P. Norton
Affiliation:
dnort@mse.ufl.edu, University of Florida, United States
D. C. Look
Affiliation:
David.Look@wpafb.af.mil, Wright State University, United States
W. Schoenfeld
Affiliation:
winston@mail.ucf.edu, University of Central Florida, United States
O. Lopatiuk
Affiliation:
lopatiuk@creol.ucf.edu, University of Central Florida, United States
L. Chernyak
Affiliation:
chernyak@physics.ucf.edu, University of Central Florida, United States
M. Cheung
Affiliation:
University at Buffalo, Buffalo, NY 14260
A.N. Cartwright
Affiliation:
University at Buffalo, Buffalo, NY 14260
M. Gerhold
Affiliation:
mike.gerhold@us.army.mil, U.S. Army Research Office, United States
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Abstract

This paper reviews of some of the progress made in the development of ZnO-based light emitting diodes (LEDs). n-ZnO/p-AlGaN-based heterostructures have been successfully for the fabrication of UV emitting LEDs that have operated at temperatures up to 650K, suggesting an excitonic origin for the optical transitions. RF-plasma-assisted molecular beam epitaxy has been used to grow epitaxial CdxZn1-xO films on GaN/sapphire structure. These films have a single-crystal wurtzite structure as demonstrated by structural and compositional analysis. High quality CdxZn1-xO films were grown with up to x=0.78 mole fraction as determined by RBS and SIMS techniques. Optical emission ranging from purple (Cd0.05Zn0.95O) to yellow (Cd0.29Zn0.71O) was observed. Compositional fluctuations in a Cd0.16Zn0.84O films were not detected by spatially resolved CL measurements, although intensity fluctuation with features of ∼0.5 μm diameter were seen on the intensity maps. Time resolved photoluminescence shows multi-exponential decay with 21 psec. and 49±3 psec. lifetimes, suggesting that composition micro-fluctuations may be present in Cd0.16Zn0.84O film.

Keywords

II-VImolecular beam epitaxy (MBE)optoelectronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF18-01-EE09-01
Copyright
Copyright © Materials Research Society 2006

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References

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