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Certification of NIST Standard Reference Material 640d

Published online by Cambridge University Press:  29 February 2012

David R. Black ,
Donald Windover ,
Albert Henins ,
David Gil ,
James Filliben  and
James P. Cline
David R. Black*
Affiliation:
National Institute of Standards and Technology, Gaithersburg, Maryland 20899
Donald Windover
Affiliation:
National Institute of Standards and Technology, Gaithersburg, Maryland 20899
Albert Henins
Affiliation:
National Institute of Standards and Technology, Gaithersburg, Maryland 20899
David Gil
Affiliation:
National Institute of Standards and Technology, Gaithersburg, Maryland 20899
James Filliben
Affiliation:
National Institute of Standards and Technology, Gaithersburg, Maryland 20899
James P. Cline
Affiliation:
National Institute of Standards and Technology, Gaithersburg, Maryland 20899
*
a)Author to whom correspondence should be addressed. Electronic mail: david.black@nist.gov
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Abstract

The National Institute of Standards and Technology (NIST) certifies a variety of standard reference materials (SRM) to address specific aspects of instrument performance for divergent beam diffractometers. This paper describes SRM 640d, the fifth generation of this powder diffraction SRM, which is certified with respect to the lattice parameter. It consists of approximately 7.5 g silicon powder specially prepared to produce strain-free particles in a size range between 1 and 10 μm to eliminate size-broadening effects. It is typically used for calibrating powder diffractometers for the line position and line shape. A NIST built diffractometer, incorporating many advanced design features, was used to certify the lattice parameter of the silicon powder measured at 22.5 °C. Both type A, statistical, and type B, systematic, errors have been assigned to yield a certified value for the lattice parameter of a=0.543 159±0.000 020 nm.

Keywords

standard reference materialX-ray diffractioncertificationlattice parametersilicon
Type
Technical Articles
Information
Powder Diffraction , Volume 25 , Issue 2 , June 2010 , pp. 187 - 190
Copyright
Copyright © Cambridge University Press 2010

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