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Influence of thermal expansion on the lattice parameter of silicona)

Published online by Cambridge University Press:  10 January 2013

Fengchao Liu
Fengchao Liu
Affiliation:
Department of Physics, South China Normal University, Guangzhou 510631, China
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Abstract

Considering the thermal expansion of silicon at ambient conditions, the lattice parameter will change 0.00032 Å for a 10 °C range. This range is measurable with modern diffraction instrumentation illustrating the importance of knowing the accurate lattice parameter, the temperature of measurement, and the thermal expansion coefficient. The best value for the expansion coefficient is 2.45×10−6/°C.

Keywords

coefficient of thermal expansionlattice constantsilicon
Type
Research Article
Information
Powder Diffraction , Volume 9 , Issue 4 , December 1994 , pp. 260 - 264
Copyright
Copyright © Cambridge University Press 1994

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