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Compact Cryogenic Receivers for the 1.3 to 43 GHz Range

Published online by Cambridge University Press:  03 August 2017

S. Weinreb
Affiliation:
National Radio Astronomy Observatory*, 2015 Ivy Road, Charlottesville, Virginia 22903
R. Norrod
Affiliation:
National Radio Astronomy Observatory*, 2015 Ivy Road, Charlottesville, Virginia 22903
M. W. Pospieszalski
Affiliation:
National Radio Astronomy Observatory*, 2015 Ivy Road, Charlottesville, Virginia 22903

Extract

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A series of front-ends utilizing small closed-cycle refrigerators and very low-noise, high-electron-mobility transistor (HEMT) amplifiers have been developed for use in the Very Long Baseline Array (VLBA). The frequency bands, amplifier noise temperatures, expected system temperatures, and current status are shown in Table I. The receivers are designed to be light weight (∼ 55 pounds except for 105 pounds at 1.5 GHz) for ease of installation and maintenance, are easily remotely controlled and monitored, and provide dual-channel circular polarization capability. Detailed descriptions of some of the front-ends are given in VLBA technical reports.

Type
Instrumentation and Analysis
Copyright
Copyright © Reidel 1988 

References

[1] Pospieszalski, M. W., Weinreb, S., “FET's and HEMT's at Cryogenic Temperatures -Their Properties and Use in Low-Noise Amplifiers,” to be presented at IEEE 1987 Int. Mic. Symp., Las Vegas, June 1987.Google Scholar
[2] Weinreb, S., Dill, H., and Harris, R., “Low-Noise, 8.4 GHz, Cryogenic GASFET Front-End,” VLBA Technical Report No. 1, National Radio Astronomy Observatory, Charlottesville, VA, Aug. 29, 1984.Google Scholar
[3] Norrod, R., “Model F103, 1.5 GHz Cryogenic Front-End,” VLBA Technical Report No. 2, National Radio Astronomy Observatory, Charlottesville, VA, Sept. 10, 1986.Google Scholar
[4] Norrod, R., “Model F105, 4.8 GHz Cryogenic Front-End,” VLBA Technical Report No. 3, National Radio Astronomy Observatory, Charlottesville, VA, Dec. 18, 1986.Google Scholar
[5] Tomassetti, G., Weinreb, S., and Wellington, K., “Low-Noise, 10.7 GHz, Cooled GaAs FET Amplifier,” Electronics Letters, vol. 17, no. 25/26, pp. 949951, Dec. 10, 1981.Google Scholar