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Analysis and modeling of the self-heating effect in SiGe HBTs

Published online by Cambridge University Press:  13 October 2003

H. Mnif ,
Th. Zimmer ,
J. L. Battaglia  and
S. Fregonese
H. Mnif*
Affiliation:
Laboratoire de Microélectronique IXL, UMR 5818, University of Bordeaux I, 33405 Talence, France
Th. Zimmer
Affiliation:
Laboratoire de Microélectronique IXL, UMR 5818, University of Bordeaux I, 33405 Talence, France
J. L. Battaglia
Affiliation:
LEPT – ENSAM, Esplanade des Arts et Métiers, 33405 Talence, France
S. Fregonese
Affiliation:
Laboratoire de Microélectronique IXL, UMR 5818, University of Bordeaux I, 33405 Talence, France
*
mnif@ixl.fr
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Abstract

This paper investigates the self-heating effect in SiGe heterojunction bipolar transistors. A physical study leads to a nonlinear physical model describing static and dynamic self-heating mechanism. The implementation of this model using an electrical equivalent circuit is presented. Our approach is validated using measurements on devices from different technologies. System configuration, measurement, and calibration issues are presented.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 25 , Issue 1 , January 2004 , pp. 11 - 23
Copyright
© EDP Sciences, 2004

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