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Annealing and thickness effects on some electrical and optical properties ofSb:SnO2 films

Published online by Cambridge University Press:  15 December 1999

E. Kh. Shokr ,
M. M. Wakkad ,
H. A. Abd El-Ghanny  and
H. M. Ali
E. Kh. Shokr*
Affiliation:
Physics Department, Faculty of Science, Sohag, Egypt
M. M. Wakkad
Affiliation:
Physics Department, Faculty of Science, Sohag, Egypt
H. A. Abd El-Ghanny
Affiliation:
Physics Department, Faculty of Science, Sohag, Egypt
H. M. Ali
Affiliation:
Physics Department, Faculty of Science, Sohag, Egypt
*
eshokr@yahoo.com
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Abstract

Effects of annealing and film thickness on the electrical and optical properties of Sb:SnO2 films deposited by electron beam from bulk samples prepared using sintering technique have been investigated. A compromise between low resistivity and high transparency of the film has been studied using the factor of merit. This factor, which has been found maximum for film 100 nm thick annealed at 550 °C for 15 min, seemed to be enhanced with increasing annealing time and/or film thickness confirming the simultaneous improvements of transparency and conductance with the latters. Other optical and electrical parameters such as refractive index, width of energy gap, density of localized states, concentration and mobility of carriers and Seebeck coefficient have been studied also, discussed and correlated to the microstructure changes with annealing and film thickness.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 8 , Issue 3 , December 1999 , pp. 215 - 224
Copyright
© EDP Sciences, 1999

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