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Dark electrical and photovoltaic properties of Schottky device based on organic thin film of 4-tricyanovinyl-N, N-diethylaniline

Published online by Cambridge University Press:  30 October 2009

M. M. El-Nahass ,
K. F. Abd-El-Rahman  and
A. A. A. Darwish
M. M. El-Nahass
Affiliation:
Physics Department, Faculty of Education, Ain Shams University, Rorxy Square 11757, Cairo, Egypt
K. F. Abd-El-Rahman
Affiliation:
Physics Department, Faculty of Education, Ain Shams University, Rorxy Square 11757, Cairo, Egypt
A. A. A. Darwish*
Affiliation:
Physics Department, Faculty of Education, Ain Shams University, Rorxy Square 11757, Cairo, Egypt
*
aaadarwish@gmail.com
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Abstract

The electrical and photovoltaic characteristics of thermally evaporated thin films of 4-tricyano- vinyl-N,N-diethylaniline sandwiched between indium tin oxide and aluminium has been investigated. Dark current density-voltage characteristics under forward bias are found to be due to thermionic emission conduction at lower voltage region. While, at higher voltage region there is space-charge-limited conduction controlled by exponential trap distribution above the valance edge. Reverse bias curve is interpreted in terms of Poole-Frenkel effect. The device exhibits photovoltaic characteristics when it illuminated through Al electrode. The typical photovoltaic parameters were estimated at room temperature and under light illumination with an input power density of 80 mW/cm−2.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 48 , Issue 3 , December 2009 , 30403
Copyright
© EDP Sciences, 2009

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