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The effects of the temperature on I-V and C-V characteristics ofAl/P2ClAn(C2H5COOH)/p-Si/Al structure

Published online by Cambridge University Press:  01 April 2009

A. F. Özdemir ,
Z. Kotan ,
D. A. Aldemir  and
S. Altındal
A. F. Özdemir*
Affiliation:
Süleyman Demirel University, Faculty of Sciences and Arts, Department of Physics, 32260 Isparta, Turkey
Z. Kotan
Affiliation:
Süleyman Demirel University, Faculty of Sciences and Arts, Department of Physics, 32260 Isparta, Turkey
D. A. Aldemir
Affiliation:
Süleyman Demirel University, Faculty of Sciences and Arts, Department of Physics, 32260 Isparta, Turkey
S. Altındal
Affiliation:
Gazi University, Faculty of Engineering and Architecture, Department of Chemical Engineering, 06500 Ankara, Turkey
*
ozdemir@fef.sdu.edu.tr
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Abstract

The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of metal-organic compound conductive polymer-semiconductor Al/P2ClAn(C2H5COOH)/p-Si structures were measured in the temperature range 80–340 K. P2ClAn: the poly(2-chloroaniline). The P2ClAn emeraldine salt was synthesized chemically by using propionic (C2H5COOH) acid. The analysis of I-V characteristics based on the thermoionic emission (TE) mechanism has revealed a decrease of zero-bias barrier height and a increase of the ideality factor at lower temperatures. Temperature dependence of the barrier height (BH) has shown a disagreement with those calculated from C-V characteristics. This behaviour is attributed to Schottky barrier inhomogeneities at interface. The temperature coefficient of BH has been found to be -2.9×10-4 eV/K for Al/P2ClAn(C2H5COOH)/p-Si. ln(I 0/ $T^{2})$ versus 1/T plot gives activation energy and Richardson constant $A^{\ast}$ as 0.12 eV and 3.82×10-9 A/K2 cm2, respectively.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 46 , Issue 2 , May 2009 , 20402
Copyright
© EDP Sciences, 2009

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