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FEM modeling of finite electronically controllable PBG structures

Published online by Cambridge University Press:  21 December 2004

B. Delhom
Affiliation:
ESYCOM, Université de Marne-la-Vallée, 5 boulevard Descartes, Champs-sur-Marne, 77454 Marne-la-Vallée Cedex 2, France
E. Richalot*
Affiliation:
ESYCOM, Université de Marne-la-Vallée, 5 boulevard Descartes, Champs-sur-Marne, 77454 Marne-la-Vallée Cedex 2, France
S. Mengue
Affiliation:
ESYCOM, Université de Marne-la-Vallée, 5 boulevard Descartes, Champs-sur-Marne, 77454 Marne-la-Vallée Cedex 2, France
O. Picon
Affiliation:
ESYCOM, Université de Marne-la-Vallée, 5 boulevard Descartes, Champs-sur-Marne, 77454 Marne-la-Vallée Cedex 2, France
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Abstract

A numerical method based on the finite-element method is developed to study active photonic bandgap materials (PBG) of finite size. After validating our method, we focus on metallic PBGs including diodes. These structures are characterized in the far-field and the near-field, and the influence of diode states and material finiteness is examined.

Keywords

Type
Research Article
Copyright
© EDP Sciences, 2005

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