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Identification of hydrogen related defects in proton implanted float-zone silicon

Published online by Cambridge University Press:  29 November 2002

P. Lévêque ,
A Hallén ,
B. G. Svensson ,
J. Wong-Leung ,
C. Jagadish  and
V. Privitera
P. Lévêque
Affiliation:
Royal Institute of Technology, Solid State Electronics, Electrum 229, 16440 Kista-Stockholm, Sweden
A Hallén
Affiliation:
Royal Institute of Technology, Solid State Electronics, Electrum 229, 16440 Kista-Stockholm, Sweden
B. G. Svensson*
Affiliation:
Royal Institute of Technology, Solid State Electronics, Electrum 229, 16440 Kista-Stockholm, Sweden Oslo University, Department of Physics, Physical Electronics, PB 1048 Blindern, 0316 Oslo, Norway
J. Wong-Leung
Affiliation:
Australian National University, Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Canberra ACT 0200, Australia
C. Jagadish
Affiliation:
Australian National University, Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Canberra ACT 0200, Australia
V. Privitera
Affiliation:
CNR-IMETEM, Stradale Primosole 50, 95121 Catania, Italy
*
b.g.svensson@fys.uio.no
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Abstract

Hydrogen related defects in high purity n-type float zone silicon samples have been studied by means of Deep Level Transient Spectroscopy. They were introduced, as well as the characteristic vacancy-oxygen (VO) and divacancy (${\rm V}_2$) centers, by MeV proton implantation. Two hydrogen related defect levels were resolved at 0.32 eV and 0.45 eV below the conduction band edge (Ec). Careful annealing studies indicate strongly that a third hydrogen related level, overlapping with the singly negative charge state level of ${\rm V}_2$, is also present in the implanted samples. The annealing behavior of the hydrogen related defects has been compared with literature data leading to a rather firm identification. The $E_{\rm c}-0.32$ eV level originates from a VO center partly saturated with hydrogen (a VOH complex) while the $E_{\rm c}-0.45$ eV level may be ascribed to a complex involving a monovacancy and a hydrogen atom (a VH complex). The third hydrogen related defect is tentatively ascribed to a complex involving a hydrogen atom and a divacancy (a ${\rm V}_2{\rm H}$ complex).

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 23 , Issue 1 , July 2003 , pp. 5 - 9
Copyright
© EDP Sciences, 2003

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References

Mogro-Campero, A., Love, R.P., Chang, M.F., Dyer, R.F., IEEE Trans. Electron. Devices 33, 1667 (1986)
Sawko, D.C., Bartko, J., IEEE Nucl. Sci. 30, 1756 (1983) CrossRef
Lang, D.V., J. Appl. Phys. 45, 3023 (1974) CrossRef
Bonde Nielsen, K., Dobaczewski, L., Goscinski, K., Bendesen, R., Andersen, O., Bech Nielsen, B., Physica B 273-274, 167 (1999) CrossRef
Lévêque, P., Pellegrino, P., Hallén, A., Svensson, B.G., Privitera, V., Nucl. Instrum. Methods B 174, 297 (2001) CrossRef
Biersack, J.P., Haggmark, L.G., Nucl. Instrum. Methods 174, 257 (1980); J.F. Ziegler, J.P. Biersack, U. Littmark, in The Stopping and Range of Ions in Solids, edited by J.F. Ziegler (Pergamon, New York, 1985), Vol. 1 CrossRef
Hallén, A., Ingemarsson, P.A., Håkansson, P., Possnert, G., Sundqvist, B.U.R., Nucl. Instrum. Methods B 36, 345 (1989) CrossRef
Svensson, B.G., Rydén, K.-H., Lewerentz, B.M.S., J. Appl. Phys. 66, 1699 (1989) CrossRef
L.C. Kimerling, in Radiation Effects in Semiconductors, edited by N.B. Urli, J.W. Corbett (Inst. Phys. Conf. Ser., 31 1977), p. 221
Svensson, B.G., Willander, M., J. Appl. Phys. 62, 2758 (1987) CrossRef
Evwaraye, A.O., Sun, E., J. Appl. Phys. 47, 3776 (1976) CrossRef
Watkins, G.D., Corbett, J.W., Phys. Rev. 121, 1001 (1961); J.W. Corbett, G.D. Watkins, R.M. Chrenko, R.S. McDonald, ibid. 121, 1015 (1961) CrossRef
Song, L.W., Zhan, X.D., Benson, B.W., Watkins, G.D., Phys. Rev. B 42, 5765 (1990) CrossRef
Svensson, B.G., Hallén, A., Sundqvist, B.U.R., Mater. Sci. Eng. B 4, 285 (1989) CrossRef
Hallén, A., Sundqvist, B.U.R., Paska, Z., Svensson, B.G., Rosling, M., Tirén, J., J. Appl. Phys. 67, 1266 (1990) CrossRef
Svensson, B.G., Mohadjeri, B., Hallén, A., Svensson, J.H., Corbett, J.W., Phys. Rev. B 43, 2292 (1991) CrossRef
Corbett, J.W., Lindström, J.L., Pearton, S.J., MRS Symp. Proc. 104, 229 (1988) and references therein CrossRef