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Impact of ultra-thinning on DC characteristics of MOSFET devices
Published online by Cambridge University Press: 15 January 2002
Abstract
The purpose of this paper is to highlight the impact of thinning on low and high levels DC characteristics of SmartMOS LDMOS devices. Both subthreshold and saturation current voltage deviations are discussed.
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- Research Article
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- © EDP Sciences, 2002
References
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