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Intraband light absorption in free-standing porous silicon

Published online by Cambridge University Press:  18 May 2011

R. S. Dariani*
Affiliation:
Department of Physics, Alzahra University, 19938, Tehran, Iran
N. Rahmani
Affiliation:
Department of Physics, Alzahra University, 19938, Tehran, Iran
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Abstract

We have prepared free-standing porous silicon (FPS) samples with various porosities using electrochemical etching. The result of a study combining absorption and photoluminescence (PL) from FPS samples with porosities in the range 53–76% is presented. A blue shift of the PL peak position and an increase of the PL intensity with enhancing porosity have been observed. Furthermore, the PL peak and intensity of porous silicon (PS) samples are compared with FPS samples. Our results show that the PL peak intensity reduces 1.5–2.5 times from PS to FPS. However, no notable shift of the PL peak position from PS to FPS has been observed.

Type
Research Article
Copyright
© EDP Sciences, 2011

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