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A model for the open circuit voltage relaxation inCu(In,Ga)Se2 heterojunction solar cells

Published online by Cambridge University Press:  15 October 1999

Th. Meyer ,
M. Schmidt ,
F. Engelhardt ,
J. Parisi  and
U. Rau
Th. Meyer
Affiliation:
Faculty of Physics, University of Oldenburg, 26111 Oldenburg, Germany
M. Schmidt
Affiliation:
Faculty of Physics, University of Oldenburg, 26111 Oldenburg, Germany
F. Engelhardt
Affiliation:
Faculty of Physics, University of Oldenburg, 26111 Oldenburg, Germany
J. Parisi
Affiliation:
Faculty of Physics, University of Oldenburg, 26111 Oldenburg, Germany
U. Rau*
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
*
thorsten.meyer@uni-oldenburg.deuwe.rau@ipe.uni-stuttgart.de
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Abstract

This article investigates the electronic transport properties of ZnO/ CdS/ Cu(In,Ga)Se2 heterojunction solar cells during and after illumination or forward bias in the dark. We observe a relaxation of the open circuit voltage under constant illumination as well as a relaxation of the voltage drop over the device under constant forward bias current in the dark. Both phenomena are accompanied by an increase of the sample capacitance. We introduce a general quantitative model concept for the open circuit voltage relaxation and related effects in heterojunction devices that explains the phenomena as a consequence of the persistent capture of charge carriers within the space charge region. We apply our concept to develop a specific quantitative model for the observed metastablity in Cu(In,Ga)Se2 heterojunction solar cells.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 8 , Issue 1 , October 1999 , pp. 43 - 52
Copyright
© EDP Sciences, 1999

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