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Modeling of the spectral response of AlxGa1−xN p-n junctionphotodetectors

Published online by Cambridge University Press:  15 July 2000

M. Hanzaz ,
A. Bouhdada ,
E. Monroy ,
E. Muñoz ,
P. Gibart  and
F. Omnès
M. Hanzaz
Affiliation:
LPMM, Université Hassan II, Faculté des Sciences Aïn Chok Km 8, route El Jadida, BP 5366, Maârif, Casablanca, Morocco
A. Bouhdada*
Affiliation:
LPMM, Université Hassan II, Faculté des Sciences Aïn Chok Km 8, route El Jadida, BP 5366, Maârif, Casablanca, Morocco
E. Monroy
Affiliation:
ETSI Telecommunicacion, Universitad Politecnica de Madrid, 28040 Madrid, Spain
E. Muñoz
Affiliation:
ETSI Telecommunicacion, Universitad Politecnica de Madrid, 28040 Madrid, Spain
P. Gibart
Affiliation:
CRHEA-CNRS, parc Sophia Antipolis, rue Bernard Gregory, 06560 Valbonne, France
F. Omnès
Affiliation:
CRHEA-CNRS, parc Sophia Antipolis, rue Bernard Gregory, 06560 Valbonne, France
*
bouhdada@facsc-achok.ac.ma
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Abstract

We propose to model the spectral response of p-n junction photodetectors based on gallium nitride and related AlGaN alloys. The model is based on the resolution of the differential equations that govern the excess carrier variation in each layer of the photodiode taking into account all the physical parameters, in particular the presence of deep trap levels in the forbidden gap. We notice that the theoretical results are in good agreement with the experiments. We have also analysed the effect of the recombination velocity at the illuminated surface, as well as the impact of the thickness and the doping density of the p-type layer (illuminated zone) on the spectral response magnitude.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 11 , Issue 1 , July 2000 , pp. 29 - 34
Copyright
© EDP Sciences, 2000

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