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Noise measurements on single electron transistors using bias switching read-out
Published online by Cambridge University Press: 15 September 2000
Abstract
We present a simple bias reversal technique for single electron
transistors (SET) to remove fluctuations of tunneling resistance from the
read-out signal at low frequencies. The gain of the device is kept
constant
under bias reversal by using asymmetric junction capacitances.
In our Al/AlOx/Al devices with 1.2 μm island size and
100 × 100 nm2 tunnel junctions, the noise at 10 Hz is
$6 \times 10^{-4} e/\sqrt{\mathrm{Hz}}$, independent of the bias modulation.
- Type
- Research Article
- Information
- The European Physical Journal - Applied Physics , Volume 11 , Issue 3 , September 2000 , pp. 227 - 229
- Copyright
- © EDP Sciences, 2000