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Remote plasma assisted MOCVD growth of GaN on 4H-SiC: growth mode characterization exploiting ellipsometry

Published online by Cambridge University Press:  14 September 2005

M. Losurdo ,
M. M. Giangregorio ,
P. Capezzuto ,
G. Bruno ,
T.-H. Kim ,
S. Choi  and
A. Brown
M. Losurdo*
Affiliation:
Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari, Italy
M. M. Giangregorio
Affiliation:
Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari, Italy
P. Capezzuto
Affiliation:
Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari, Italy
G. Bruno
Affiliation:
Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari, Italy
T.-H. Kim
Affiliation:
Department of Electrical and Computer Engineering, Duke University, Durham, NC 27709, USA
S. Choi
Affiliation:
Department of Electrical and Computer Engineering, Duke University, Durham, NC 27709, USA
A. Brown
Affiliation:
Department of Electrical and Computer Engineering, Duke University, Durham, NC 27709, USA
*
maria.losurdo@ba.imip.cnr.it
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Abstract

GaN is grown on Si-face 4H-SiC(0001) substrates using remote plasma-assisted metalorganic chemical vapour deposition (RP-MOCVD). The pre-dissociation of nitrogen by the remote plasma is used for lowering the deposition temperature to approximately 700 °C. Remote plasma processing is also used for SiC surface pre-treatments including a low-temperature atomic hydrogen cleaning (by remote H2 plasma) and nitridation (by remote N2 plasma). Furthermore, in situ spectroscopic ellipsometry is used for monitoring in real time all the steps of substrate pre-treatments and the heteroepitaxial growth of GaN on SiC. Our characterization emphasis is on understanding the nucleation mechanism and the GaN growth mode, which depend on the SiC surface preparation.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 31 , Issue 3 , September 2005 , pp. 159 - 164
Copyright
© EDP Sciences, 2005

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