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Schottky barrier formation at the Au to rare earth doped GaN thin film interface

Published online by Cambridge University Press:  18 August 2011

S.R. McHale ,
J.W. McClory ,
J.C. Petrosky ,
J. Wu ,
A. Rivera ,
R. Palai ,
Ya.B. Losovyj  and
P.A. Dowben
S.R. McHale*
Affiliation:
Air Force Institute of Technology, 2950 Hobson Way, Wright Patterson Air Force Base, OH 45433, USA
J.W. McClory*
Affiliation:
Air Force Institute of Technology, 2950 Hobson Way, Wright Patterson Air Force Base, OH 45433, USA
J.C. Petrosky
Affiliation:
Air Force Institute of Technology, 2950 Hobson Way, Wright Patterson Air Force Base, OH 45433, USA
J. Wu
Affiliation:
Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, San Juan, PR 00931-3343, USA
A. Rivera
Affiliation:
Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, San Juan, PR 00931-3343, USA
R. Palai
Affiliation:
Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, San Juan, PR 00931-3343, USA
Ya.B. Losovyj
Affiliation:
The J. Bennett Johnston Sr. Center for Advanced Microstructures and Devices, Louisiana State University, 6890 Jefferson Highway, Baton Rouge, LA 70806, USA
P.A. Dowben
Affiliation:
Department of Physics and Astronomy, Nebraska Center for Materials and Nanoscience, University of Nebraska, P.O. Box 880111, Lincoln, NE 68588-0111, USA
*
ae-mail: stephen.mchale@afit.edu
be-mail: john.mcclory@afit.edu
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Abstract

The Schottky barriers formed at the interface between gold and various rare earth doped GaN thin films (RE = Yb, Er, Gd) were investigated in situ using synchrotron photoemission spectroscopy. The resultant Schottky barrier heights were measured as 1.68 ± 0.1 eV (Yb:GaN), 1.64 ± 0.1 eV (Er:GaN), and 1.33 ± 0.1 eV (Gd:GaN). We find compelling evidence that thin layers of gold do not wet and uniformly cover the GaN surface, even with rare earth doping of the GaN. Furthermore, the trend of the Schottky barrier heights follows the trend of the rare earth metal work function.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 55 , Issue 3 , September 2011 , 31301
Copyright
© EDP Sciences, 2011

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References

Koubaa, T., Dammak, M., Kammoun, M., Jadwisienczak, W.M., Lozykowski, H.J., J. Alloys Compd. 496, 56 (2010)CrossRef
Koubaa, T., Dammak, M., Kammoun, M., Jadwisienczak, W.M., Lozykowski, H.J., Anders, A., J. Appl. Phys. 106, 013106 (2009)CrossRef
Jadwisienczak, W.M., Lozykowski, H.J., Opt. Mater. 23, 175 (2003)CrossRef
Kenyon, A.J., Prog. Quant. Electr. 26, 225 (2002)CrossRef
Park, J.H., Steckl, A.J., Phys. Stat. Sol. (a) 205, 26 2008CrossRef
Nishikawa, A., Kawasaki, T., Furukawa, N., Terai, Y., Fujiwara, Y., Appl. Phys. Express 2, 1004 (2009)CrossRef
Steckl, A.J., Heikenfeld, J., Lee, D.S., Garter, M., Mater. Sci. Eng. B 81, 97 (2001)CrossRef
Tao, J.H., Perea-Lopez, N., McKittrick, J., Talbot, J.B., Klinedinst, K., Raukas, M., Laski, J., Mishra, K.C., Hirata, G., Phys. Stat. Sol. C 5, 1889 (2008)
Shi, J., Chandrashekhar, M.V.S., Reiherzer, J., Schaff, W., Lu, J., Disalvo, F., Spencer, M., Phys. Stat. Sol. (c) 5, 1495 (2008)CrossRef
Duan, C.G., Sabirianov, R.F., Mei, W.N., Dowben, P.A., Jaswal, S.S., Tsymbal, E.Y., J. Phys.: Condens. Matter 19, 315220 (2007)
Heine, V., Phys. Rev. 138, 1689 (1965)CrossRef
Kampen, T.U., Mönch, W., Appl. Surf. Sci. 117, 388 (1997)CrossRef
Kribes, Y., Harrison, I., Tuck, B., Cheng, T.S., Foxon, C.T., Semicond. Sci. Technol. 12, 913 (1997)CrossRef
He, L., Wang, X.J., Zhang, R., J. Vac. Sci. Technol. A: Vac. Surf. Films 17, 1217 (1999)CrossRef
Hacke, P., Detchprohm, T., Hiramatsu, K., Sawaki, N., Appl. Phys. Lett. 63, 2676 (1993)CrossRef
Binari, S.C., Dietrich, H.B., Kelner, G., Rowland, L.B., Doverspike, K., Gaskill, D.K., Electron. Lett. 30, 909 (1994)CrossRef
Schmitz, A.C., Ping, A.T., Khan, M.A., Chen, Q., Yang, J.W., Adesida, I., Semicond. Sci. Technol. 11, 1464 (1996)CrossRef
Sporken, R., Silien, C., Malengreau, F., Grigorov, K., Caudano, R., Sanchez, F.J., Calleja, E., Munoz, E., Beaumont, B., Gibart, P., MRS Int. J. Nitride Semicond. Res. 1 (1996)
Liu, Q.Z., Lau, S.S., Solid-State Electron. 42, 677 (1998)CrossRef
Wu, C.I., Kahn, A., Vac, J., J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct. 16, 2218 (1998)CrossRef
Barinov, A., Casalis, L., Gregoratti, L., Kiskinova, M., Phys. Rev. B 63, 85308 (2001)CrossRef
Barinov, A., Casalis, L., Gregoratti, L., Kiskinova, M., J. Phys. D: Appl. Phys. 34, 279 (2001)CrossRef
Rickert, K.A., Ellis, A.B., Kim, J.K., Lee, J.L., Himpsel, F.J., Dwikusuma, F., Kuech, T.F., J. Appl. Phys. 92, 6671 (2002)CrossRef
Arehart, A.R., Moran, B., Speck, J.S., Mishra, U.K., DenBaars, S.P., Ringel, S.A., J. Appl. Phys. 100, 023709 (2006)CrossRef
Monroy, E., Calle, F., Palacios, T., Sánchez-Osorio, J., Verdú, M., Sánchez, F.J., Montojo, M.T., Omnès, F., Bougrioua, Z., Moerman, I., Phys. Stat. Sol. (a) 188, 367 (2001)3.0.CO;2-5>CrossRef
Götz, W., Johnson, N.M., Street, R.A., Amano, H., Akasaki, I., Appl. Phys. Lett. 66, 1340 (1995)CrossRef
Qiao, D., Yu, L.S., Lau, S.S., Redwing, J.M., Lin, J.Y., Jiang, H.X., J. Appl. Phys. 87, 801 (2000)CrossRef
Binet, F., Duboz, J.Y., Laurent, N., Rosencher, E., Briot, O., Aulombard, R.L., J. Appl. Phys. 81, 6449 (1997)CrossRef
Shalish, I., Kronik, L., Segal, G., Shapira, Y., Eizenberg, M., Salzman, J., Appl. Phys. Lett. 77, 987 (2000)CrossRef
Fowler, R.H., Phys. Rev. 38, 45 (1931)CrossRef
Picozzi, S., Continenza, A., Satta, G., Massidda, S., Freeman, A.J., Phys. Rev. B 61, 16736 (2000)CrossRef
Kurtin, S., McGill, T.C., Mead, C.A., Phys. Rev. Lett. 22, 1433 (1969)CrossRef
Foresi, J.S., Moustakas, T.D., Appl. Phys. Lett. 62, 2859 (1993)CrossRef
Guo, J.D., Feng, M.S., Guo, R.J., Pan, F.M., Chang, C.Y., Appl. Phys. Lett. 67, 2657 (1995)CrossRef
Mori, T., Kozawa, T., Ohwaki, T., Taga, Y., Nagai, S., Yamasaki, S., Asami, S., Shibata, N., Koike, M., Appl. Phys. Lett. 69, 3537 (1996)CrossRef
Schroder, D.K., Semiconductor Material and Device Characterization, (John Wiley & Sons, 1990)Google Scholar
McHale, S.R., McClory, J.W., Petrosky, J.C., Wu, J., Palai, R., Dowben, P.A., Ketsman, I., Mater. Lett. 65, 1476 (2011)CrossRef
Losovyj, Y., Ketsman, I., Morikawa, E., Wang, Z., Tang, J., Dowben, P., Nucl. Instr. Methods A 582, 264 (2007)CrossRef
Hormes, J., Scott, J.D., Suller, V.P., Synchrotron Radiat. News 19, 27 (2006)CrossRef
Dowben, P.A., LaGraffe, D., Onellion, M., J. Phys.: Condens. Matter 1, 6571 (1989)
Kim, M.H., Lee, S.N., Huh, C., Park, S.Y., Han, J.Y., Seo, J.M., Park, S.J., Phys. Rev. B 61, 10966 (2000)CrossRef
Bermudez, V.M., Jung, T.M., Doverspike, K., Wickenden, A.E., J. Appl. Phys. 79, 110 (1996)CrossRef
Bermudez, V.M., Koleske, D.D., Wickenden, A.E., Appl. Surf. Sci. 126, 69 (1998)CrossRef
Xiao, W., Guo, Q., Xue, Q., Wang, E.G., J. Appl. Phys. 94, 4847 (2003)CrossRef
Pankove, J.I., Schade, H., Appl. Phys. Lett. 25, 53 (1974)CrossRef
Ramchandani, M.G., J. Phys. C: Solid State Phys. 3, S1 (1970)CrossRef
Ebel, H., Gurker, N., Phys. Lett. A 50, 449 (1975)CrossRef
Ley, L., Pollak, R.A., McFeely, F.R., Kowalczyk, S.P., Shirley, D.A., Phys. Rev. B 9, 600 (1974)CrossRef
Hüfner, S., Photoelectron Spectroscopy: Principles and Applications, (Springer Verlag, Germany, 2003)CrossRefGoogle Scholar
Chye, P.W., Lindau, I., Pianetta, P., Garner, C.M., Su, C.Y., Spicer, W.E., Phys. Rev. B 18, 5545 (1978)CrossRef
Mönch, W., Semiconductor Surfaces and Interfaces, (Springer Verlag; Berlin, 2001)CrossRefGoogle Scholar
Penn, D.R., Phys. Rev. B 35, 482 (1987)CrossRef
Seah, M.P., Dench, W.A., Surf. Interface Anal. 1, 2 (1979)CrossRef
Venables, J., Introduction to Surface and Thin Film Processes, (Cambridge University Press, 2000)CrossRefGoogle Scholar
Venables, J.A., Surf. Sci. 299, 798 (1994)CrossRef
Liu, Q.Z., Smith, K.V., Yu, E.T., Lau, S.S., Perkins, N.R., Keuch, T.F., Mater. Res. Soc. Symp. Proc. 449, 1079 (1997)CrossRef
Lay, G.L., Mao, D., Kahn, A., Hwu, Y., Margaritondo, G., Phys. Rev. B 43, 14301 (1991)CrossRef
Lambrecht, W.R.L., Segall, B., Strite, S., Martin, G., Agarwal, A., Morkoc, H., Rockett, A., Phys. Rev. B 50, 14155 (1994)CrossRef
Eastman, D.E., Phys. Rev. B 2, 1 (1970)CrossRef
Nikolic, M.V., Radi, S.M., Mini, V., Risti, M.M., Microelectron. J. 27, 93 (1996)CrossRef
Savitskiy, E.M., Terekhova, V.F., Maslova, E.V., Radio Eng. Electron. Phys. 7, 1233 (1967)