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Some aspects of pulsed laser deposition of Si nanocrystalline films

Published online by Cambridge University Press:  17 September 2009

B. Polyakov ,
A. Petruhins ,
J. Butikova ,
A. Kuzmin  and
I. Tale
B. Polyakov*
Affiliation:
Institute of Solid State Physics, University of Latvia, Kengaraga st. 8, 1063 Riga, Latvia
A. Petruhins
Affiliation:
Institute of Solid State Physics, University of Latvia, Kengaraga st. 8, 1063 Riga, Latvia
J. Butikova
Affiliation:
Institute of Solid State Physics, University of Latvia, Kengaraga st. 8, 1063 Riga, Latvia
A. Kuzmin
Affiliation:
Institute of Solid State Physics, University of Latvia, Kengaraga st. 8, 1063 Riga, Latvia
I. Tale
Affiliation:
Institute of Solid State Physics, University of Latvia, Kengaraga st. 8, 1063 Riga, Latvia
*
boris.polyakov@cfi.lu.lv
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Abstract

Nanocrystalline silicon films were deposited by a picosecond laser ablation on different substrates in vacuum at room temperature. A nanocrystalline structure of the films was evidenced by atomic force microscopy (AFM), optical and Raman spectroscopies. A blue shift of the absorption edge was observed in optical absorption spectra, and a decrease of the optical phonon energy at the Brillouin zone centre was detected by Raman scattering. Early stages of nanocrystalline film formation on mica and HOPG substrates were studied by AFM. Mechanism of nanocrystal growth on substrate is discussed.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 48 , Issue 2 , November 2009 , 20502
Copyright
© EDP Sciences, 2009

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