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Stabilization of a 1.55 μm extended-cavity semiconductor laser by intracavity dynamic holography

Published online by Cambridge University Press:  15 November 2002

A. Godard*
Affiliation:
Laboratoire Charles Fabry de l'Institut d'Optique (Unité Mixte de Recherche 8501 du CNRS), Bât. 503, Centre Scientifique d'Orsay, BP 147, 91403 Orsay Cedex, France NetTest, Photonics Division, 45 avenue Jean Jaurès, BP 81, 78344 Les Clayes-sous-Bois, France
G. Pauliat
Affiliation:
Laboratoire Charles Fabry de l'Institut d'Optique (Unité Mixte de Recherche 8501 du CNRS), Bât. 503, Centre Scientifique d'Orsay, BP 147, 91403 Orsay Cedex, France
G. Roosen
Affiliation:
Laboratoire Charles Fabry de l'Institut d'Optique (Unité Mixte de Recherche 8501 du CNRS), Bât. 503, Centre Scientifique d'Orsay, BP 147, 91403 Orsay Cedex, France
Ph. Graindorge
Affiliation:
NetTest, Photonics Division, 45 avenue Jean Jaurès, BP 81, 78344 Les Clayes-sous-Bois, France
Ph. Martin
Affiliation:
NetTest, Photonics Division, 45 avenue Jean Jaurès, BP 81, 78344 Les Clayes-sous-Bois, France
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Abstract

Commercial grating-tuned single-mode extended-cavity semiconductor lasers (ECLD's) can be tuned over 100 nm around 1.55 μm. This continuous tuning with no mode-hopping requires delicate factory adjustments and a high mechanical stability. These constrains are relaxed by the adjunction of a photorefractive crystal inside the cavity which creates an adaptive spectral filter which decreases the loss of the lasing-mode and thus enhances its stability.

Keywords

Type
Research Article
Copyright
© EDP Sciences, 2002

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