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Stacking faults and phase transformations in silicon nitride

Published online by Cambridge University Press:  15 November 1998

X. Milhet*
Affiliation:
Laboratoire de Métallurgie Physique (UMR 6630 CNRS), Université de Poitiers, UFR Sciences, SP2MI, Boulevard 3, Téléport 2, 86960 Futuroscope Cedex, France
J.-L. Demenet
Affiliation:
Laboratoire de Métallurgie Physique (UMR 6630 CNRS), Université de Poitiers, UFR Sciences, SP2MI, Boulevard 3, Téléport 2, 86960 Futuroscope Cedex, France
J. Rabier
Affiliation:
Laboratoire de Métallurgie Physique (UMR 6630 CNRS), Université de Poitiers, UFR Sciences, SP2MI, Boulevard 3, Téléport 2, 86960 Futuroscope Cedex, France
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Abstract

From observations of extended dislocation nodes in β silicon nitride, possible stacking fault structures in the basal plane of this compound have been investigated. It has been found that stacking fault structure is locally analogous to α silicon nitride. A phase transformation α to β or β to α can also be achieved by cooperative shear of partial dislocations with $1/3\langle1\bar{1}00\rangle$ Burgers vectors.

Keywords

Type
Research Article
Copyright
© EDP Sciences, 1998

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