The strain-dependent electronic structure of graphene ribbons is studied based on tight-binding theory. The change of ribbons in applied electric field brought by strain is revealed. In contrast to normal strain, it is found that shear strain yields new transverse electric field which is similar to Hall effect. The conductance of ribbons under uniform uniaxial strain is calculated in Landauer formula. It is obtained that the conductance decreases (increases) 1.62% (1.64%) under the 0.5% uniaxial tension (0.5% compression) for a 200 nm-width ribbon.