Raman scattering can be used as an efficient probe with regard to the understanding of local structure in highly disordered films. This investigation is particularly fruitful if one takes into account Stokes, anti-Stokes and multiple-order processes. The interpretation is given in terms of the whole density of vibrational states. Some recent results obtained with amorphous Si, SiC and C films are presented. Comparison with other techniques, including numeric modelisations, are discussed.