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Analysis of poly-Si thin film p+-n-n+ homojunction solar cell and heterojunction solar cell with and without a thin μc-Si layer at the interface of a-Si and poly-Si layers

Published online by Cambridge University Press:  27 March 2009

A. J. Letha  and
H. L. Hwang
A. J. Letha*
Affiliation:
Institute of Electronics Engineering, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan, Republic of China
H. L. Hwang
Affiliation:
Institute of Electronics Engineering, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan, Republic of China
*
ajletha@hotmail.com
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Abstract

In this study, new possibilities for higher efficiency poly-Si thin film solar cells are investigated using MEDICITM device simulator. The poly-Si p+-n-n+ thin film solar cell with a thin a-Si p+ layer is found to have higher efficiency than the homojunction p+-n-n+ cell. Further improvement in efficiency of the heterojunction p+-n-n+ cell is achieved by introducing a thin μc-Si layer at the interface of a-Si emitter and poly-Si absorber layers. The μc-Si layer at the interface is found to reduce the recombination losses at the interface and improved the fill factor and efficiency of the cell. The photovoltaic parameters of the cell and the absorber layer thickness for optimum efficiency are highly influenced by grain size and passivation at the grain boundary.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 46 , Issue 2 , May 2009 , 20302
Copyright
© EDP Sciences, 2009

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