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A comprehensive study of beryllium diffusion in InGaAs using different forms ofkick-out mechanism
Published online by Cambridge University Press: 15 October 1999
Abstract
Be diffusion during post-growth annealing has been investigated in InGaAs epitaxial layers. Kick-out mechanisms considering species charges, built-in electric field and Fermi-level effect have been studied. Several forms of kick-out mechanism have been implemented in our simulation programs. Experimental concentration profiles obtained by SIMS analysis have been compared systematically with the numerical results of simulations. We have deduced that the kick-out mechanism Bei0 ↔ Bes− + IIII+ is the dominating diffusion mechanism in InGaAs under our experimental conditions (C0 = 3 × 19 cm−3). With our experimental data, we have found that the effective diffusion coefficient values are D = (7.7−9) × 10−13 cm2 s−1 at T = 700 °C and D = (1.4−1.5) × 10−11 cm2 s−1 at T = 800 °C which is several orders of magnitude higher than most published data. A possible explanation would be the effect of V/III flux ratio.
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- © EDP Sciences, 1999
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