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Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode

Published online by Cambridge University Press:  18 August 2011

M. Gassoumi ,
S. Saadaoui ,
M.M. Ben Salem ,
C. Gaquiere  and
H. Maaref
M. Gassoumi*
Affiliation:
Laboratoire de Micro-Optoélectroniques et Nanostructures, Université de Monastir, Tunisia
S. Saadaoui
Affiliation:
Laboratoire de Micro-Optoélectroniques et Nanostructures, Université de Monastir, Tunisia
M.M. Ben Salem
Affiliation:
Laboratoire de Micro-Optoélectroniques et Nanostructures, Université de Monastir, Tunisia
C. Gaquiere
Affiliation:
Institut d’Électronique de Microélectronique et de Nanotechnologie IEMN, Département hyperfréquences et Semiconducteurs, Université des Sciences et Technologies de Lille, France
H. Maaref
Affiliation:
Laboratoire de Micro-Optoélectroniques et Nanostructures, Université de Monastir, Tunisia
*
ae-mail: gassoumimalek@yahoo.fr
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Abstract

In this work we report on the characteristics of (Ni/Au)/AlGaN/GaN/SiC Schottky barrier diode (SBD). A variety of electrical techniques such as capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements were used to characterize the diodes. We observed an hysteresis phenomenon on the C-V characteristics in the Schottky diode. The parasitic effect can be attributed to the presence of traps in the heterostructure. Deep defects analysis was performed by deep-level transient spectroscopy (DLTS). One hole trap have been detected with an activation energy and a capture cross-section of 0.75 eV and 1.093 × 10−11 cm2. The localization and the identification of this trap have occurred and a correlation between the defect and the hysteresis phenomenon has been discussed. At high temperatures, the DLTS signal sometimes becomes negative, likely due to an artificial surface-state effect.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 55 , Issue 3 , September 2011 , 30101
Copyright
© EDP Sciences, 2011

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