Hostname: page-component-5c6d5d7d68-vt8vv Total loading time: 0.001 Render date: 2024-08-18T13:14:42.095Z Has data issue: false hasContentIssue false
  • English
  • Français

Improvement of saturation optical intensity in electroabsorption modulators with asymmetric intra-step-barrier coupled double strained quantum wells

Published online by Cambridge University Press:  28 September 2011

K. Abedi
K. Abedi*
Affiliation:
Department of Electrical Engineering, Faculty of Electrical and Computer Engineering, Shahid Beheshti University, G.C. 1983963113, Tehran, Islamic Republic of Iran
*
ae-mail: k_abedi@sbu.ac.ir
Get access

Abstract

In this article, the saturation optical intensity in electroabsorption modulators (EAMs) at 1.55 μm with asymmetric intra-step-barrier coupled double strained quantum well (AICD-SQWs) active region is theoretically investigated and compared with intra-step quantum well (IQW) structure. For this purpose, the two basic escape processes, thermionic emission and tunneling, are considered and the escape times of photogenerated carriers both for the AICD-SQW and the IQW based on the InGaAlAs material system are calculated and compared. From the reduction in escape times, improvement in the saturation optical intensity due to the introduction of the AICD-SQW structure is estimated to be greater than 6 dB at high fields.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 56 , Issue 1: Topical Issue: 5th Colloquium Interdisciplinary in Instrumentation (C2I) 2010 , October 2011 , 10403
Copyright
© EDP Sciences, 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Sohn, S.I., Han, S.K., Microwave Opt. Technol. Lett. 25, 334 (2000)3.0.CO;2-4>CrossRef
Liu, B., Shim, J., Chiu, Y., Keating, A., Piprek, J., Bowers, J.E., J. Lightwave Technol. 21, 3011 (2003)
Shim, J., Liu, B., Piprek, J., Bowers, J.E., IEEE Photon. Technol. Lett. 16, 1035 (2004)CrossRef
Zhuang, Y., Chang, W.S.C., Yu, P.K.L., IEEE Photon. Technol. Lett. 16, 2033 (2004)CrossRef
Shin, D.S., Yu, P.K.L., Pappert, S.A., J. Appl. Phys. 89, 1515 (2001)CrossRef
Shin, D.S., J. Korean Phys. Soc. 41, 364 (2005)
Cheng, Y.B., Pan, J.Q., Chen, W.X., Zhou, F., Wang, W., J. Phys. D: Appl. Phys. 40, 4120 (2007)CrossRef
Wood, T.H., Pastalan, J.Z., Burrus, C.A., Johnson, B.C., Miller, B.I., deMiguel, J.L., Appl. Phys. Lett. 57, 1081 (1990)CrossRef
Abedi, K., Ahmadi, V., Darabi, E., Moravvej-Farshi, M.K., Sheikhi, M.H., Solid State Electron. 53, 312 (2008)CrossRef
Abedi, K., Ahmadi, V., Moravvej-Farshi, M.K., Opt. Quant. Electron. 41, 719 (2009)CrossRef
Ahmadi, V., Abedi, K., Darabi, E., in Proc. of 9th Int. Conf. on Transparent Optical Networks ICTON, Rome, Italy, 2007, p. 251
Chemla, D.S., Miller, D.A.B., Smith, P.W., Gossard, A.C., Wiegmann, W., IEEE J. Quant. Electron. 20, 265 (1984)CrossRef
Fox, A.M., Miller, D.A.B., Livescu, G., Cunningham, J.E., Jan, W.Y., IEEE J. Quant. Electron. 27, 2281 (1991)CrossRef
Halliday, D.P., Moss, D., Charbonneau, S., Aers, G.C., Landhecr, D., Chatenoud, F., Conn, D., Can. J. Phys. 70, 985 (1992)CrossRef
Larsson, A., Andrekson, P.A., Eng, S.T., Yariv, A., IEEE J. Quant. Electron. 24, 787 (1988)CrossRef
Moss, D.J., Ido, T., Sano, H., IEEE J. Quant. Electron. 30, 1015 (1994)CrossRef
Liu, H.C., Steele, A.G., Buchanan, M., Wasilewski, Z.R., Appl. Phys. Lett. 73, 2029 (1993)
Gurioli, M., Martinez-Pastor, J., Colocci, M., Deparis, C., Chastaingt, B., Massies, J., Phys. Rev. B 46, 6922 (1992)CrossRef
Miyazaki, Y., Tada, H., Tokizaki, S., Takagi, K., Hanamaki, Y., Aoyagi, T., Mitsui, Y., IEEE J. Quant. Electron. 39, 1009 (2003)CrossRef
Zhang, Y., Chen, W., Wang, A., Jiang, H., Liu, C., Liu, S., IEEE J. Quant. Electron. 37, 923 (2001)
Shin, D.S., Jpn. J. Appl. Phys. 45, 9063 (2006)CrossRef