Hostname: page-component-5c6d5d7d68-sv6ng Total loading time: 0 Render date: 2024-08-16T21:13:19.163Z Has data issue: false hasContentIssue false
  • English
  • Français

Improving reliability of SCB initiators based on Al/Ni multilayer nanofilms

Published online by Cambridge University Press:  26 July 2013

Peng Zhu ,
Dongle Li ,
Shuai Fu ,
Bo Hu ,
Ruiqi Shen  and
Yinghua Ye
Peng Zhu*
Affiliation:
School of Chemical Engineeering, Nanjing University of Science and Technology, Nanjing, China
Dongle Li
Affiliation:
School of Chemical Engineeering, Nanjing University of Science and Technology, Nanjing, China
Shuai Fu
Affiliation:
School of Chemical Engineeering, Nanjing University of Science and Technology, Nanjing, China
Bo Hu
Affiliation:
School of Chemical Engineeering, Nanjing University of Science and Technology, Nanjing, China
Ruiqi Shen
Affiliation:
School of Chemical Engineeering, Nanjing University of Science and Technology, Nanjing, China
Yinghua Ye
Affiliation:
School of Chemical Engineeering, Nanjing University of Science and Technology, Nanjing, China
*
ae-mail: 719026474@qq.com
Get access

Abstract

This paper exploits an energetic initiator realized by integrating Al/Ni multilayer nanofilms with semiconductor bridge (SCB). The as-deposited nanofilms have been characterized with varied analytical techniques. Results show that distinct nanofilms are sputter deposited in a layered geometry and give a heat of reaction equal to 1134 J/g. The firing tests of the initiators were accomplished using capacitor discharge unit. Results show that the initiators possess several excellent characteristics such as fast ignition time, low power consumption, high output energy and so on. Therefore, Al/Ni multilayer nanofilms are suitable heat source for improving the reliability of SCB initiators.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 63 , Issue 1: International Semiconductor Conference Dresden-Grenoble – ISCDG 2012 , July 2013 , 10302
Copyright
© EDP Sciences, 2013

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Martinez, M.J., Baer, M.R., Sandia National Laboratory, Albuquerque, NM (USA), Report No. 89-2033 (DE90-005710), 1989
Grubelich, M.C., Bickes, R.W. Jr., Report No. 95-2579C (DE96012949), 1996
Marx, K.D., Bickes, R.W. Jr., Wackerbarth, D.E., Report No. 97-8246 (DE970524995), 1996
Benson, D.A., Larsen, M.E., Renlund, A.M., Trott, W.M., Bickes, R.W., J. Appl. Phys. 62, 1622 (1987)CrossRef
Zhang, K., Yang, Y., Pun, E.Y.B., Shen, R., Nanotechnol. 21, 235602 (2010)CrossRef
Zhang, K., Rossi, C., Rodriguez, G.A.A., J. Appl. Phys. Lett. 91, 113117 (2007)CrossRef
Zhang, K., Rossi, C., Petrantoni, M., J. Microelectromech. Syst. 17, 832 (2008)CrossRef
Ma, E., Tompson, C.V., Clevenger, L.A., Tu, K.N., Appl. Phys. Lett. 57, 1262 (1990)CrossRef
Gavens, A.J., Heerden, D.V., Mann, A.B., Reiss, M.E., Weihs, T.P., J. Appl. Phys. 87, 1255 (2000)CrossRef
Gunduz, I.E., Fadenberger, K., Kokonou, M., Rebholz, C., Doumanidis, C.C., Appl. Phys. Lett. 93, 134101 (2008)CrossRef
Fadenberger, K., Gunduz, I.E., Tsotsos, C., Kokonou, M., Gravani, S., Brandstetter, S., Bergamaschi, A., Schmitt, B., Mayrhofer, P.H., Doumanidis, C.C., Rebholz, C., Appl. Phys. Lett. 97, 144101 (2010)CrossRef
Levashov, E.A., Petrzhik, M.I., Tyurina, M.Y., Kiryukhantsev-Korneev, F.V., Tsygankov, P.A., Rogachev, A.S., Metallurgist 54, 623 (2011)CrossRef
Rossi, C., Zhang, K., Estève, D., Alphonse, P., Ching, J.Y.C., Tailhades, P., Vahlas, C., J. Microelectromech. Syst. 16, 919 (2007)CrossRef
Rogachev, A.S., Russ. Chem. Rev. 77, 21 (2008)CrossRef
Rogachev, A.S., Mukasyan, A.S., Combust. Explos. Shock Waves 46, 243 (2010)CrossRef
Dreizin, E.L., Prog. Energy Combust. Sci. 35, 141 (2009)CrossRef
Qiu, X., Tang, R., Liu, R., Guo, S., Yu, H., in Transducers’11 (Beijing, China, 2011), pp. 1665–1668 Google Scholar
Qiu, X., Wang, J., Scripta Mater. 56, 1055 (2007)CrossRef
Qiu, X., Tang, R., Liu, R.R., Huang, H., Guo, S.M., Yu, H.Y., J. Mater. Sci. Mater. Electron. 23, 2140 (2012)CrossRef
Yang, C., Hu, Y., Shen, R., Ye, Y., Wang, S., Hua, T., Appl. Phys. A 1 (2013)
Feng, H., Zhang, L., Zhu, S., Wu, R., Li, Y., Shen, R., IEEE Trans. Plasma Sci. 37, 1830 (2009)CrossRef
Zhu, P., Shen, R., Ye, Y., Zhou, X., Hu, Y., J. Appl. Phys. 110, 074513 (2011)CrossRef
Zhu, P., Shen, R., Fiadosenka, N.N., Ye, Y., Hu, Y., J. Appl. Phys. 109, 084523 (2011)CrossRef
Zhou, X., Shen, R., Ye, Y., Zhu, P., Hu, Y., Wu, L., J. Appl. Phys. 110, 094505 (2011)CrossRef