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Low-voltage pentacene field-effect transistors with high mobility and unusual change of the mobility by simple storage*

Published online by Cambridge University Press:  18 August 2011

H. Yan ,
T. Jo ,
H. Hanagata  and
H. Okuzaki
H. Yan*
Affiliation:
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-4-37 Takeda, Kofu 400-8511, Japan Department of Chemistry, Zhengzhou University, 100 Kexue Avenue, Zhengzhou 450001, P.R. China
T. Jo
Affiliation:
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-4-37 Takeda, Kofu 400-8511, Japan
H. Hanagata
Affiliation:
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-4-37 Takeda, Kofu 400-8511, Japan
H. Okuzaki*
Affiliation:
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-4-37 Takeda, Kofu 400-8511, Japan
*
ae-mail: yanhu@yamanashi.ac.jp
be-mail: okuzaki@yamanashi.ac.jp
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Abstract

Pentacene field-effect transistors (FETs), fabricated on strontium titanate without self-assembled monolayer, showed mobility as high as 1.9 cm2/V s at operating voltage as low as −3 V. The mobility of the FET was significantly increased to attain 3.3 cm2/V s simply by storage in a desiccator for 1032 h. Based on careful examination of the time dependence of the mobility for the FET devices, it was indicated that the mobility significantly increased in initial stage to several thousand hours and then monotonously decreased beyond then regardless of the initial value of the mobility.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 55 , Issue 3 , September 2011 , 30201
Copyright
© EDP Sciences, 2011

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Footnotes

*

Supplementary material: Figures are available in electronic form at http://www.epjap.org

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