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Nonlinear diffusion in excited Si crystals

Published online by Cambridge University Press:  21 December 2004

A. J. Janavičius ,
Ž. Norgėla  and
R. Purlys
A. J. Janavičius*
Affiliation:
Department of Physics and Mathematics, Šiauliai University, Višinskio 25, 5400, Šiauliai, Lithuania
Ž. Norgėla
Affiliation:
Department of Physics and Mathematics, Šiauliai University, Višinskio 25, 5400, Šiauliai, Lithuania
R. Purlys
Affiliation:
Faculty of Physics, Vilnius University, Saulėtekio 9, 2040 Vilnius, Lithuania
*
AYanavi@takas.lt
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Abstract

We discuss the properties of the nonlinear diffusion equation for the case of diffusion in excited systems. The diffusion coefficient is directly proportional to the concentration of impurities and depends on the time in a special way. For the description of the excited systems, we used a special temperature function, which defined the time dependent diffusion coefficient and the Boltzmann's distribution of the excited vacancies or impurity atoms in solids. This model was used for approximation of very fast diffusion of metastable vacancies irradiated by soft X-rays in an excited Si crystal.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 29 , Issue 2 , February 2005 , pp. 127 - 131
Copyright
© EDP Sciences, 2005

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References

Janavičius, A.J., Phys. Lett. A 224, 159 (1997) CrossRef
Janavičius, A.J., Acta Phys. Pol. A 93, 505 (1998) CrossRef
Janavičius, A.J., Ž. Norgėla, D. Jurgaitis, Math. Modelling Anal. 6, 77 (2001)
Seung-Man Park, Jae Mook Kim, Hee Chul Lee, Choong-Ki Kim, J. Appl. Phys. 35, 1554 (1996) CrossRef
Purlys, R., Janavičius, A.J., Mekys, A., Balakauskas, S., Storasta, J., Lith. J. Phys. 41, 376 (2001)
Marciak-Kozlowska, J., Mucha, Z., Lith. J. Phys. 35, 616 (1995) (in Russian)
B.N. Mukashev, X.A. Abdulin, Yu.V. Gorelinski, Adv. Phys. Sci. 143 (2000) (in Russian)
Janavičius, A.J., Acta Phys. Pol. A 93, 731 (1998) CrossRef
Janavičius, A.J., Banys, J., Purlys, R., Balakauskas, S., Lith. J. Phys. 42, 337 (2002)
Van Vechten, J.A., Phys. Rev. B 10, 1482 (1974) CrossRef
V.S. Vavilov, A.E. Kiv, O.R. Nijazova, Mechanism of producing and migration of defects in semiconductors (Science, Moscow, 1981), p. 368
Watkins, G.D., Mater. Sci. Semicond. Process. 3, 227 (2000) CrossRef
I.P. Stepanenko, Foundations of microelectronics (Soviet radio, Moscow, 1980), p. 424 (in Russian)