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Photonic bandgap properties of nanoporous silicon microstructures*

Published online by Cambridge University Press:  15 October 2001

P. Ferrand ,
S. Setzu  and
R. Romestain
P. Ferrand*
Affiliation:
Laboratoire de Spectrométrie Physique, Université J. Fourier Grenoble 1 (CNRS UMR 5588), BP 87, 38402 Saint Martin d'Hères, France
S. Setzu
Affiliation:
Laboratoire de Spectrométrie Physique, Université J. Fourier Grenoble 1 (CNRS UMR 5588), BP 87, 38402 Saint Martin d'Hères, France Dipartimento di Fisica - sezione INFM di Cagliari, Citt. Universitaria, Strada Prov. le Monseratto-sestu Km 0.700, 09042 Monserrato (CA), Italy
R. Romestain
Affiliation:
Laboratoire de Spectrométrie Physique, Université J. Fourier Grenoble 1 (CNRS UMR 5588), BP 87, 38402 Saint Martin d'Hères, France
*
Patrick.Ferrand@ujf-grenoble.fr
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Abstract

We report the recent progress in the structuration of nanoporous silicon at a submicronic scale. Multilayered periodic structures, with low-roughness interfaces, and an index contrast of 0.6 are reported. Their strong photonic bandgap properties are demonstrated by the measurement of a reflectance up to 99.64% ± 0.01%, by mean of ring-down spectroscopy. This property is the base of a novel structure allowing an efficient guiding of light in a low-index layer. The submicronic structuration of the optical index of a planar waveguide along one direction of plane is also described, and a realistic map of the optical index, demonstrating a index contrast of 0.5, is unambiguously deduced from transmission spectra.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 16 , Issue 1 , October 2001 , pp. 31 - 35
Copyright
© EDP Sciences, 2001

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Footnotes

*

This paper has been presented to the meeting of the French Research Group on “Microcavities and Photonics Crystals” which was held at Lyon on December 7 and 8, 2000.

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